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An efficient and optimum design technique for stacked HBT Ka –band power amplifier using 130nm SiGe based BiCMOS technology

Shib Sankar Singh, M. Madhav Kumar, Divya Kumar Garg

Abstract


A Ka-band single stage triple stacked power amplifier using Heterojunction Bipolar transistor (HBT) has been presented. The proposed circuit has design using 130nm SiGe based BiCMOS (Bipolar complementary metal-oxide-semiconductor) technology. A stacked transistor structure has a series connected transistor structure that allows for a large output voltage swing from the top transistor without exceeding the transistor breakdown voltage limitations, and this technique overcomes the relatively low breakdown voltage of SiGe-based HBT when compared to the parallel current combining method.. Series connected PA shows much higher input and output impedance than parallel current combining PA. Therefore, series connected PA required simple input/output matching circuit and easy to design at mm wave frequency range. With the proposed method , this power amplifier achieved small signal gain of +11.61±0.3dB, with input return loss better than -27.0dB and output return loss better than- 2.205dB over 35.0GHz-37.0GHz. This amplifier achieved +19.673dBm linear output power(+1 dB compression point), +20.8dBm of saturated output power , peak power added efficiency +30.1258% and % THD(Total Harmonic distortion) is less than +23.0% over 35.0GHz-37.0GHz. This amplifier consumes very low dc power. This amplifier consumes +7.2mA of current with supply voltage of +5.0volt.The novelty of this design is very low current consumption using HBT technologies till date.

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References


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DOI: https://doi.org/10.37628/ijssm.v7i2.145

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